BUT11AF DATASHEET PDF

BUT11AF datasheet, BUT11AF pdf, BUT11AF data sheet, datasheet, data sheet, pdf, Fairchild Semiconductor, NPN Silicon Transistor. BUT11AF. GENERAL DESCRIPTION. High-voltage, high-speed glass- passivated npn power transistor in a SOT envelope with electrically. BUT11AF NPN Silicon Transistor. Absolute Maximum Ratings TC=25°C unless otherwise noted. Symbol VCBO Parameter Collector-Base Voltage: BUT11AF.

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BUT11AF Datasheet, Equivalent, Cross Reference Search

Typical base-emitter saturation voltage. SOT; The seating datawheet is electrically isolated from all terminals. Switching times waveforms with inductive load.

August 8 Rev 1.

Publication thereof does not convey nor imply any license dwtasheet patent or other industrial or intellectual property rights. Reverse bias safe operating area. UNIT – – 1.

Typical DC current gain. August 2 Rev 1. Region of permissible DC operation. Oscilloscope display for VCEOsust.

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Transistor BUT11AF, NPN, TOF

Exposure to limiting values for extended periods may affect device reliability. Forward bias safe operating area.

Normalised power derating and second breakdown curves. Stress above one or more of the limiting values may cause permanent datasyeet to the device. August 4 Ptot max and Ptot peak max lines. Refer to mounting instructions for F-pack envelopes. Test circuit inductive load.

Datasheet «BUT11AF»

Product specification This data sheet contains final product specifications. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. Observe the general handling precautions for electrostatic-discharge sensitive devices ESDs to prevent damage to MOS gate datssheet.

Application information Where application information is given, it is advisory and does not form part of the specification. Typical base-emitter and collector-emitter saturation voltages. No liability will be accepted by the publisher for any consequence of its use.

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The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. Extension for repetitive pulse operation.

Test circuit for VCEOsust. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Test circuit resistive load. Reproduction in whole vut11af in part is prohibited without the prior written consent of the copyright owner. August 7 Rev 1. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied.

Switching times waveforms with resistive load.